Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / UNR412200A

| Manufacturer Part Number | UNR412200A |
|---|---|
| Future Part Number | FT-UNR412200A |
| SPQ / MOQ | Contact Us |
| Packing Material | Reel/Tray/Tube/Others |
| Series | - |
| UNR412200A Status (Lifecycle) | In Stock |
| Part Status | Obsolete |
| Transistor Type | PNP - Pre-Biased |
| Current - Collector (Ic) (Max) | 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 100mA, 10V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 1µA |
| Frequency - Transition | 200MHz |
| Power - Max | 300mW |
| Mounting Type | Through Hole |
| Package / Case | 3-SSIP |
| Supplier Device Package | NS-A1 |
| Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
| UNR412200A Weight | Contact Us |
| Replacement Part Number | UNR412200A-FT |

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