Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / NSS35200MR6T1G
Manufacturer Part Number | NSS35200MR6T1G |
---|---|
Future Part Number | FT-NSS35200MR6T1G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
NSS35200MR6T1G Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 2A |
Voltage - Collector Emitter Breakdown (Max) | 35V |
Vce Saturation (Max) @ Ib, Ic | 310mV @ 20mA, 2A |
Current - Collector Cutoff (Max) | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1.5A, 1.5V |
Power - Max | 625mW |
Frequency - Transition | 100MHz |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SOT-23-6 |
Supplier Device Package | 6-TSOP |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
NSS35200MR6T1G Weight | Contact Us |
Replacement Part Number | NSS35200MR6T1G-FT |
MJD112RL
ON Semiconductor
MJD117
ON Semiconductor
MJD117RLG
ON Semiconductor
MJD128T4
ON Semiconductor
MJD18002D2T4G
ON Semiconductor
MJD200
ON Semiconductor
MJD200T4
ON Semiconductor
MJD200T5G
ON Semiconductor
MJD210
ON Semiconductor
MJD210RL
ON Semiconductor
EX64-TQG100A
Microsemi Corporation
AFS250-FG256I
Microsemi Corporation
APA450-PQ208I
Microsemi Corporation
A40MX02-PL68A
Microsemi Corporation
5SGXMA5N2F40I3LN
Intel
EP4CE22E22C9LN
Intel
5SGXMA7H3F35I3LN
Intel
LCMXO2-4000ZE-2FTG256C
Lattice Semiconductor Corporation
EP2AGX125EF29I5
Intel
EP20K400EBC652-3AA
Intel