Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / JANTXV2N6058

| Manufacturer Part Number | JANTXV2N6058 |
|---|---|
| Future Part Number | FT-JANTXV2N6058 |
| SPQ / MOQ | Contact Us |
| Packing Material | Reel/Tray/Tube/Others |
| Series | Military, MIL-PRF-19500/502 |
| JANTXV2N6058 Status (Lifecycle) | In Stock |
| Part Status | Active |
| Transistor Type | NPN - Darlington |
| Current - Collector (Ic) (Max) | 12A |
| Voltage - Collector Emitter Breakdown (Max) | 80V |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 120mA, 12A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 6A, 3V |
| Power - Max | 150W |
| Frequency - Transition | - |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-3 |
| Supplier Device Package | TO-3 (TO-204AA) |
| Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
| JANTXV2N6058 Weight | Contact Us |
| Replacement Part Number | JANTXV2N6058-FT |

JAN2N6674
Microsemi Corporation

JAN2N6675
Microsemi Corporation

JAN2N6676
Microsemi Corporation

JAN2N6678
Microsemi Corporation

JAN2N7369
Microsemi Corporation

APT27ZTR-G1
Diodes Incorporated

DSS5220T-13
Diodes Incorporated

DSS5220T-7
Diodes Incorporated

DXTN3C60PS-13
Diodes Incorporated

JANTX2N1893
Microsemi Corporation

XC3S2000-5FGG900C
Xilinx Inc.

XC2S15-6VQ100C
Xilinx Inc.

XCS10-3VQ100C
Xilinx Inc.

M2GL025-1FCSG325
Microsemi Corporation

XC7S100-2FGGA484I
Xilinx Inc.

A3P600-1FGG484
Microsemi Corporation

A40MX02-3PLG68I
Microsemi Corporation

EP1S25F780I6N
Intel

EP20K400BC652-1
Intel

EP2S180F1020I4
Intel