Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / FJNS4208RBU

| Manufacturer Part Number | FJNS4208RBU |
|---|---|
| Future Part Number | FT-FJNS4208RBU |
| SPQ / MOQ | Contact Us |
| Packing Material | Reel/Tray/Tube/Others |
| Series | - |
| FJNS4208RBU Status (Lifecycle) | In Stock |
| Part Status | Obsolete |
| Transistor Type | PNP - Pre-Biased |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 47 kOhms |
| Resistor - Emitter Base (R2) | 22 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 56 @ 5mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Frequency - Transition | 200MHz |
| Power - Max | 300mW |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 Short Body |
| Supplier Device Package | TO-92S |
| Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
| FJNS4208RBU Weight | Contact Us |
| Replacement Part Number | FJNS4208RBU-FT |

PDTB114ETR
Nexperia USA Inc.

PDTB143ETR
Nexperia USA Inc.

PDTB143XTR
Nexperia USA Inc.

PDTC123ET,215
Nexperia USA Inc.

PDTC144WT,215
Nexperia USA Inc.

PDTD123ET,215
Nexperia USA Inc.

PDTD143ETR
Nexperia USA Inc.

PDTD143XTR
Nexperia USA Inc.

PDTA114TT,215
Nexperia USA Inc.

PDTD123TT,215
Nexperia USA Inc.

LCMXO2-4000HE-5TG144I
Lattice Semiconductor Corporation

XC4036XL-1HQ304I
Xilinx Inc.

XC3S1000-4FGG456I
Xilinx Inc.

A54SX32A-1TQG176
Microsemi Corporation

A3PN060-2VQG100I
Microsemi Corporation

AGLN250V5-ZVQ100I
Microsemi Corporation

5CGXFC5C6F27I7N
Intel

XC4028XL-09BG256C
Xilinx Inc.

A42MX24-PQ160A
Microsemi Corporation

EP20K160EBC356-1
Intel