Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / FJN3312RTA

| Manufacturer Part Number | FJN3312RTA |
|---|---|
| Future Part Number | FT-FJN3312RTA |
| SPQ / MOQ | Contact Us |
| Packing Material | Reel/Tray/Tube/Others |
| Series | - |
| FJN3312RTA Status (Lifecycle) | In Stock |
| Part Status | Obsolete |
| Transistor Type | NPN - Pre-Biased |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 40V |
| Resistor - Base (R1) | 47 kOhms |
| Resistor - Emitter Base (R2) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Frequency - Transition | 250MHz |
| Power - Max | 300mW |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Supplier Device Package | TO-92-3 |
| Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
| FJN3312RTA Weight | Contact Us |
| Replacement Part Number | FJN3312RTA-FT |

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